Growth parameter enhancement for MoS2 thin films synthesized by pulsed laser deposition

Martha I. Serna; Salvador Moreno; Marissa Higgins; Hyunjoo Choi; Majid Minary-Jolandan; Manuel A. Quevedo-Lopez

doi:10.1002/pssc.201600091

Growth parameter enhancement for MoS₂ thin films synthesized by pulsed laser deposition

Martha I. Serna
, Salvador Moreno
, Marissa Higgins
, Hyunjoo Choi
, Majid Minary-Jolandan
, Manuel A. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Two-dimensional materials such as graphene and MoS₂ have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS₂ layered films on amorphous (SiO₂) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∼700 °C) and laser energy density (>530 mJ /cm²) promotes crystalline MoS₂ films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS₂ films by using a laser ablation processes.

Original language	English (US)
Pages (from-to)	848-854
Number of pages	7
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	13
Issue number	10-12
DOIs	https://doi.org/10.1002/pssc.201600091
State	Published - Dec 1 2016
Externally published	Yes

Keywords

molybdenum disulfide
pulsed laser deposition
transition metal dichalcogenides

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.201600091

Cite this

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title = "Growth parameter enhancement for MoS2 thin films synthesized by pulsed laser deposition",

abstract = "Two-dimensional materials such as graphene and MoS2 have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS2 layered films on amorphous (SiO2) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∼700 °C) and laser energy density (>530 mJ /cm2) promotes crystalline MoS2 films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS2 films by using a laser ablation processes.",

keywords = "molybdenum disulfide, pulsed laser deposition, transition metal dichalcogenides",

author = "Serna, \{Martha I.\} and Salvador Moreno and Marissa Higgins and Hyunjoo Choi and Majid Minary-Jolandan and Quevedo-Lopez, \{Manuel A.\}",

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T1 - Growth parameter enhancement for MoS2 thin films synthesized by pulsed laser deposition

AU - Serna, Martha I.

AU - Moreno, Salvador

AU - Higgins, Marissa

AU - Choi, Hyunjoo

AU - Minary-Jolandan, Majid

AU - Quevedo-Lopez, Manuel A.

PY - 2016/12/1

Y1 - 2016/12/1

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AB - Two-dimensional materials such as graphene and MoS2 have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS2 layered films on amorphous (SiO2) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∼700 °C) and laser energy density (>530 mJ /cm2) promotes crystalline MoS2 films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS2 films by using a laser ablation processes.

KW - molybdenum disulfide

KW - pulsed laser deposition

KW - transition metal dichalcogenides

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