High performance ZnO nanowire FET with ITO contacts

Matthew A. Hollister; John D. Le; Guanghua Xiao; Xuekun Lu; Richard A. Kiehl

doi:10.1109/DRC.2007.4373675

High performance ZnO nanowire FET with ITO contacts

Matthew A. Hollister
, John D. Le
, Guanghua Xiao
, Xuekun Lu
, Richard A. Kiehl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Nanowire FETs based on a ZnO channel, a SiO₂ gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.

Original language	English (US)
Title of host publication	65th DRC Device Research Conference
Pages	113-114
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373675
State	Published - 2007
Externally published	Yes
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Conference

Conference	65th DRC Device Research Conference
Country/Territory	India
City	South Bend
Period	6/18/07 → 6/20/07

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373675

Cite this

@inproceedings{cdca9b5eebac41b09764fd64a26e9214,

title = "High performance ZnO nanowire FET with ITO contacts",

abstract = "Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.",

author = "Hollister, \{Matthew A.\} and Le, \{John D.\} and Guanghua Xiao and Xuekun Lu and Kiehl, \{Richard A.\}",

year = "2007",

doi = "10.1109/DRC.2007.4373675",

language = "English (US)",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "113--114",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

TY - GEN

T1 - High performance ZnO nanowire FET with ITO contacts

AU - Hollister, Matthew A.

AU - Le, John D.

AU - Xiao, Guanghua

AU - Lu, Xuekun

AU - Kiehl, Richard A.

PY - 2007

Y1 - 2007

N2 - Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.

AB - Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.

UR - https://www.scopus.com/pages/publications/47249133903

UR - https://www.scopus.com/pages/publications/47249133903#tab=citedBy

U2 - 10.1109/DRC.2007.4373675

DO - 10.1109/DRC.2007.4373675

M3 - Conference contribution

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 113

EP - 114

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

High performance ZnO nanowire FET with ITO contacts

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

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