High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

Asha Balijepalli; Joseph Ervin; Punarvasu Joshi; Jinman Yang; Yu Cao; Trevor Thornton

doi:10.1109/MWSYM.2006.249495

High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

Asha Balijepalli, Joseph Ervin, Punarvasu Joshi, Jinman Yang, Yu Cao, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

Original language	English (US)
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Pages	1335-1338
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2006.249495
State	Published - 2006
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: Jun 11 2006 → Jun 16 2006

Other

Other	2006 IEEE MTT-S International Microwave Symposium Digest
Country/Territory	United States
City	San Francisco, CA
Period	6/11/06 → 6/16/06

Keywords

Electric breakdown
MESFETs
SPICE
Silicon on insulator technology

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2006.249495

Cite this

Balijepalli, A, Ervin, J, Joshi, P, Yang, J, Cao, Y & Thornton, T 2006, High-voltage CMOS compatible SOI MESFET characterization and spice model extraction. in IEEE MTT-S International Microwave Symposium Digest., 4015171, pp. 1335-1338, 2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, United States, 6/11/06. https://doi.org/10.1109/MWSYM.2006.249495

@inproceedings{badb4d68ec874238b46a236e912558f0,

title = "High-voltage CMOS compatible SOI MESFET characterization and spice model extraction",

abstract = "A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.",

keywords = "Electric breakdown, MESFETs, SPICE, Silicon on insulator technology",

author = "Asha Balijepalli and Joseph Ervin and Punarvasu Joshi and Jinman Yang and Yu Cao and Trevor Thornton",

year = "2006",

doi = "10.1109/MWSYM.2006.249495",

language = "English (US)",

pages = "1335--1338",

booktitle = "IEEE MTT-S International Microwave Symposium Digest",

note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

}

TY - GEN

T1 - High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

AU - Balijepalli, Asha

AU - Ervin, Joseph

AU - Joshi, Punarvasu

AU - Yang, Jinman

AU - Cao, Yu

AU - Thornton, Trevor

PY - 2006

Y1 - 2006

N2 - A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

AB - A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

KW - Electric breakdown

KW - MESFETs

KW - SPICE

KW - Silicon on insulator technology

UR - http://www.scopus.com/inward/record.url?scp=34250362380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250362380&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2006.249495

DO - 10.1109/MWSYM.2006.249495

M3 - Conference contribution

SP - 1335

EP - 1338

BT - IEEE MTT-S International Microwave Symposium Digest

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -

High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

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Keywords

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