Hot carrier filtering in solution processed heterostructures: A paradigm for improving thermoelectric efficiency

Yichi Zhang; Je Hyeong Bahk; Joun Lee; Christina S. Birkel; Matthew L. Snedaker; Deyu Liu; Hongmei Zeng; Martin Moskovits; Ali Shakouri; Galen D. Stucky

doi:10.1002/adma.201304419

Hot carrier filtering in solution processed heterostructures: A paradigm for improving thermoelectric efficiency

Yichi Zhang
, Je Hyeong Bahk
, Joun Lee
, Christina S. Birkel
, Matthew L. Snedaker
, Deyu Liu
, Hongmei Zeng
, Martin Moskovits
, Ali Shakouri
, Galen D. Stucky

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/Sb₂Te₃-Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.

Original language	English (US)
Pages (from-to)	2755-2761
Number of pages	7
Journal	Advanced Materials
Volume	26
Issue number	17
DOIs	https://doi.org/10.1002/adma.201304419
State	Published - May 7 2014
Externally published	Yes

Keywords

atomic layer deposition (ALD)
hetero-structure
hot carrier filtering effect
molecular metal chalcogenide
solution processed
thermoelectric

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201304419

Cite this

@article{069e1c5abdce4b24bb1d0b3689359af7,

title = "Hot carrier filtering in solution processed heterostructures: A paradigm for improving thermoelectric efficiency",

abstract = "An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/Sb2Te3-Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.",

keywords = "atomic layer deposition (ALD), hetero-structure, hot carrier filtering effect, molecular metal chalcogenide, solution processed, thermoelectric",

author = "Yichi Zhang and Bahk, \{Je Hyeong\} and Joun Lee and Birkel, \{Christina S.\} and Snedaker, \{Matthew L.\} and Deyu Liu and Hongmei Zeng and Martin Moskovits and Ali Shakouri and Stucky, \{Galen D.\}",

year = "2014",

month = may,

day = "7",

doi = "10.1002/adma.201304419",

language = "English (US)",

volume = "26",

pages = "2755--2761",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "17",

}

TY - JOUR

T1 - Hot carrier filtering in solution processed heterostructures

T2 - A paradigm for improving thermoelectric efficiency

AU - Zhang, Yichi

AU - Bahk, Je Hyeong

AU - Lee, Joun

AU - Birkel, Christina S.

AU - Snedaker, Matthew L.

AU - Liu, Deyu

AU - Zeng, Hongmei

AU - Moskovits, Martin

AU - Shakouri, Ali

AU - Stucky, Galen D.

PY - 2014/5/7

Y1 - 2014/5/7

N2 - An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/Sb2Te3-Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.

AB - An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/Sb2Te3-Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.

KW - atomic layer deposition (ALD)

KW - hetero-structure

KW - hot carrier filtering effect

KW - molecular metal chalcogenide

KW - solution processed

KW - thermoelectric

UR - https://www.scopus.com/pages/publications/84899997448

UR - https://www.scopus.com/pages/publications/84899997448#tab=citedBy

U2 - 10.1002/adma.201304419

DO - 10.1002/adma.201304419

M3 - Article

SN - 0935-9648

VL - 26

SP - 2755

EP - 2761

JO - Advanced Materials

JF - Advanced Materials

IS - 17

ER -

Hot carrier filtering in solution processed heterostructures: A paradigm for improving thermoelectric efficiency

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this