Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

E. Luna; M. Wu; T. Aoki; M. R. McCartney; J. Puustinen; J. Hilska; M. Guina; D. J. Smith; A. Trampert

doi:10.1063/1.5111532

Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

E. Luna
, M. Wu
, T. Aoki
, M. R. McCartney
, J. Puustinen
, J. Hilska
, M. Guina
, D. J. Smith
, A. Trampert

Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

Original language	English (US)
Article number	085305
Journal	Journal of Applied Physics
Volume	126
Issue number	8
DOIs	https://doi.org/10.1063/1.5111532
State	Published - Aug 28 2019

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.5111532

Cite this

@article{60e9930ccaa94f65af57362e75b29321,

title = "Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers",

abstract = "Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.",

author = "E. Luna and M. Wu and T. Aoki and McCartney, \{M. R.\} and J. Puustinen and J. Hilska and M. Guina and Smith, \{D. J.\} and A. Trampert",

note = "Funding Information: The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University and S. Krau{\ss}, M. Matzeck, and A. Pfeiffer for TEM support at PDI. J.P. J.H., and M.G. acknowledge financial support from the European Research Council (ERC AdG AMETIST, No. 695116). The authors thank Jens Herfort for careful reading of the manuscript. Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = aug,

day = "28",

doi = "10.1063/1.5111532",

language = "English (US)",

volume = "126",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

AU - Luna, E.

AU - Wu, M.

AU - Aoki, T.

AU - McCartney, M. R.

AU - Puustinen, J.

AU - Hilska, J.

AU - Guina, M.

AU - Smith, D. J.

AU - Trampert, A.

N1 - Funding Information: The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University and S. Krauß, M. Matzeck, and A. Pfeiffer for TEM support at PDI. J.P. J.H., and M.G. acknowledge financial support from the European Research Council (ERC AdG AMETIST, No. 695116). The authors thank Jens Herfort for careful reading of the manuscript. Publisher Copyright: © 2019 Author(s).

PY - 2019/8/28

Y1 - 2019/8/28

N2 - Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

AB - Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

UR - https://www.scopus.com/pages/publications/85071696778

UR - https://www.scopus.com/pages/publications/85071696778#tab=citedBy

U2 - 10.1063/1.5111532

DO - 10.1063/1.5111532

M3 - Article

SN - 0021-8979

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 085305

ER -

Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this