Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells

M. I. Bertoni, S. Hudelson, B. K. Newman, D. P. Fenning, H. F.W. Dekkers, E. Cornagliotti, A. Zuschlag, G. Micard, G. Hahn, G. Coletti, B. Lai, T. Buonassisi

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiN x-coated stripes using laser-beam-induced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate pre- and post-hydrogenation recombination activity with GB character, density of iron-silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role.

Original languageEnglish (US)
Pages (from-to)187-191
Number of pages5
JournalProgress in Photovoltaics: Research and Applications
Issue number2
StatePublished - Mar 2011


  • defects
  • dislocations
  • hydrogen passivation
  • iron
  • multicrystalline silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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