Abstract
The intrinsic sensitivity of Cadmium Zinc Telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.
Original language | English (US) |
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Pages (from-to) | 1559-1565 |
Number of pages | 7 |
Journal | IEEE Transactions on Instrumentation and Measurement |
Volume | 52 |
Issue number | 5 |
DOIs | |
State | Published - Oct 2003 |
Externally published | Yes |
Keywords
- CdZnTe detectors
- Digital imaging
- Image enhancement
- Intrinsic sensitivity
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering