Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

G. C. Giakos; R. Guntupalli; N. Shah; S. Vedantham; S. Suryanarayanan; S. Chowdhury; N. Patnekar; S. Sumrain; K. Mehta

Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

G. C. Giakos, R. Guntupalli, N. Shah, S. Vedantham, S. Suryanarayanan, S. Chowdhury, N. Patnekar, S. Sumrain, K. Mehta

Research output: Contribution to conference › Paper › peer-review

Abstract

The intrinsic sensitivity of Cd_1-xZn_xTe semiconductor detectors have been theoretically modeled and experimentally measured, within the x-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd_1-xZn_xTe detectors exhibit good intrinsic sensitivity.

Original language	English (US)
Pages	475-480
Number of pages	6
State	Published - 2002
Externally published	Yes
Event	19th IEEE Instrumentation and Measurement Technology Conference - Anchorage, AK, United States Duration: May 21 2002 → May 23 2002

Conference

Conference	19th IEEE Instrumentation and Measurement Technology Conference
Country/Territory	United States
City	Anchorage, AK
Period	5/21/02 → 5/23/02

Keywords

CdZnTe detectors
Digital imaging
Image enhancement
Intrinsic sensitivity

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging",

abstract = "The intrinsic sensitivity of Cd1-xZnxTe semiconductor detectors have been theoretically modeled and experimentally measured, within the x-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd1-xZnxTe detectors exhibit good intrinsic sensitivity.",

keywords = "CdZnTe detectors, Digital imaging, Image enhancement, Intrinsic sensitivity",

author = "Giakos, {G. C.} and R. Guntupalli and N. Shah and S. Vedantham and S. Suryanarayanan and S. Chowdhury and N. Patnekar and S. Sumrain and K. Mehta",

year = "2002",

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note = "19th IEEE Instrumentation and Measurement Technology Conference ; Conference date: 21-05-2002 Through 23-05-2002",

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T1 - Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

AU - Giakos, G. C.

AU - Guntupalli, R.

AU - Shah, N.

AU - Vedantham, S.

AU - Suryanarayanan, S.

AU - Chowdhury, S.

AU - Patnekar, N.

AU - Sumrain, S.

AU - Mehta, K.

PY - 2002

Y1 - 2002

N2 - The intrinsic sensitivity of Cd1-xZnxTe semiconductor detectors have been theoretically modeled and experimentally measured, within the x-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd1-xZnxTe detectors exhibit good intrinsic sensitivity.

AB - The intrinsic sensitivity of Cd1-xZnxTe semiconductor detectors have been theoretically modeled and experimentally measured, within the x-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd1-xZnxTe detectors exhibit good intrinsic sensitivity.

KW - CdZnTe detectors

KW - Digital imaging

KW - Image enhancement

KW - Intrinsic sensitivity

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UR - http://www.scopus.com/inward/citedby.url?scp=0036044637&partnerID=8YFLogxK

M3 - Paper

SP - 475

EP - 480

T2 - 19th IEEE Instrumentation and Measurement Technology Conference

Y2 - 21 May 2002 through 23 May 2002

ER -

Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

Abstract

Conference

Keywords

ASJC Scopus subject areas

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Cite this