@inproceedings{eff641e7d7784cb98d56852965f1c6c6,
title = "Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions",
abstract = "Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) (area ratio 1:1 and 1:4) have been investigated in very dilute HF solutions (0.01 to 0.05%) containing controlled levels of dissolved oxygen. The increase in exposed cathode (metal) area as well as aeration results in higher corrosion of poly-Si. In de-aerated HF solutions (less than 0.5 ppm of O 2), irrespective of the area ratio, there appears to be no silicon loss. Morphological changes on poly-Si due to galvanic corrosion have been characterized using Scanning Electron Microscopy.",
author = "R. Govindarajan and M. Keswani and S. Raghavan",
year = "2011",
doi = "10.1149/1.3630821",
language = "English (US)",
isbn = "9781566779050",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "15--21",
booktitle = "Semiconductor Cleaning Science and Technology 12, SCST 12",
edition = "5",
note = "12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting ; Conference date: 10-10-2011 Through 11-10-2011",
}