ION-IMPLANTED SELF-ALIGNED-GATE QUANTUM-WELL HETEROSTRUCTURE FETs.

Richard Kiehl; S. L. Wright; J. H. Magerlein; D. J. Frank

ION-IMPLANTED SELF-ALIGNED-GATE QUANTUM-WELL HETEROSTRUCTURE FETs.

Richard Kiehl
, S. L. Wright
, J. H. Magerlein
, D. J. Frank

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An ion-implanted self-aligned-gate quantum-well metal-insulator-inverted-interface semiconductor FET (QW-MI**3SFET) has been demonstrated. Experimental and computer results show that this geometry is useful for achieving low ohmic contact resistance and access sheet resistance in quantum-well heterostructure FETs, despite the presence of heterointerfaces in the n plus access regions. In particular, ohmic contact resistance and sheet resistance values as low as 0. 29 OMEGA -mm and 290 OMEGA / D'ALEMB , respectively, have been achieved at room temperature, compared with values of 2. 0 OMEGA -mm and 1000 OMEGA / D'ALEMB , for recessed-gate designs. The barrier presented by the AlGaAs layer to deep-implanted regions is found to introduce an additional contact resistance of 0. 75 OMEGA -mm in the structures. A reduction of this resistance may be possible by optimizing the implant so as to produce enhanced compositional disordering within the n plus regions.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	IEEE
Pages	144-153
Number of pages	10
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{26e41e218ff8442f8711d0b0d19bf363,

title = "ION-IMPLANTED SELF-ALIGNED-GATE QUANTUM-WELL HETEROSTRUCTURE FETs.",

abstract = "An ion-implanted self-aligned-gate quantum-well metal-insulator-inverted-interface semiconductor FET (QW-MI**3SFET) has been demonstrated. Experimental and computer results show that this geometry is useful for achieving low ohmic contact resistance and access sheet resistance in quantum-well heterostructure FETs, despite the presence of heterointerfaces in the n plus access regions. In particular, ohmic contact resistance and sheet resistance values as low as 0. 29 OMEGA -mm and 290 OMEGA / D'ALEMB , respectively, have been achieved at room temperature, compared with values of 2. 0 OMEGA -mm and 1000 OMEGA / D'ALEMB , for recessed-gate designs. The barrier presented by the AlGaAs layer to deep-implanted regions is found to introduce an additional contact resistance of 0. 75 OMEGA -mm in the structures. A reduction of this resistance may be possible by optimizing the implant so as to produce enhanced compositional disordering within the n plus regions.",

author = "Richard Kiehl and Wright, \{S. L.\} and Magerlein, \{J. H.\} and Frank, \{D. J.\}",

year = "1987",

language = "English (US)",

pages = "144--153",

booktitle = "Unknown Host Publication Title",

publisher = "IEEE",

}

TY - GEN

T1 - ION-IMPLANTED SELF-ALIGNED-GATE QUANTUM-WELL HETEROSTRUCTURE FETs.

AU - Kiehl, Richard

AU - Wright, S. L.

AU - Magerlein, J. H.

AU - Frank, D. J.

PY - 1987

Y1 - 1987

N2 - An ion-implanted self-aligned-gate quantum-well metal-insulator-inverted-interface semiconductor FET (QW-MI**3SFET) has been demonstrated. Experimental and computer results show that this geometry is useful for achieving low ohmic contact resistance and access sheet resistance in quantum-well heterostructure FETs, despite the presence of heterointerfaces in the n plus access regions. In particular, ohmic contact resistance and sheet resistance values as low as 0. 29 OMEGA -mm and 290 OMEGA / D'ALEMB , respectively, have been achieved at room temperature, compared with values of 2. 0 OMEGA -mm and 1000 OMEGA / D'ALEMB , for recessed-gate designs. The barrier presented by the AlGaAs layer to deep-implanted regions is found to introduce an additional contact resistance of 0. 75 OMEGA -mm in the structures. A reduction of this resistance may be possible by optimizing the implant so as to produce enhanced compositional disordering within the n plus regions.

AB - An ion-implanted self-aligned-gate quantum-well metal-insulator-inverted-interface semiconductor FET (QW-MI**3SFET) has been demonstrated. Experimental and computer results show that this geometry is useful for achieving low ohmic contact resistance and access sheet resistance in quantum-well heterostructure FETs, despite the presence of heterointerfaces in the n plus access regions. In particular, ohmic contact resistance and sheet resistance values as low as 0. 29 OMEGA -mm and 290 OMEGA / D'ALEMB , respectively, have been achieved at room temperature, compared with values of 2. 0 OMEGA -mm and 1000 OMEGA / D'ALEMB , for recessed-gate designs. The barrier presented by the AlGaAs layer to deep-implanted regions is found to introduce an additional contact resistance of 0. 75 OMEGA -mm in the structures. A reduction of this resistance may be possible by optimizing the implant so as to produce enhanced compositional disordering within the n plus regions.

UR - https://www.scopus.com/pages/publications/0023591487

UR - https://www.scopus.com/pages/publications/0023591487#tab=citedBy

M3 - Conference contribution

SP - 144

EP - 153

BT - Unknown Host Publication Title

PB - IEEE

ER -

ION-IMPLANTED SELF-ALIGNED-GATE QUANTUM-WELL HETEROSTRUCTURE FETs.

Abstract

ASJC Scopus subject areas

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