Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Keyphrases

• Gallium Arsenide 100%
• Long Wavelength 100%
• Active Layer 100%
• Pseudomorphic 100%
• Emission Spectrum 50%
• Active Materials 50%
• Reflection High-energy Electron Diffraction 50%
• Quantum Well 50%
• InGaAs 50%
• Lateral Composition Modulation 50%
• Photoluminescence Emission 50%
• P Ratio 50%
• Low-temperature Photoluminescence 50%
• Room-temperature Photoluminescence 50%
• Type-II Quantum Well 50%
• Diffraction Peaks 50%

Physics

• Quantum Wells 100%
• Photoluminescence 100%
• Room Temperature 50%
• Optoelectronic Device 50%
• High Energy Electron 50%
• Electron Diffraction 50%