Mask fabrication towards sub-10 nm imprint lithography

Jian Gu; Chun Ping Jen; Qihuo Wei; Chiafu Chou; Frederic Zenhausern

doi:10.1117/12.600207

Mask fabrication towards sub-10 nm imprint lithography

Jian Gu, Chun Ping Jen, Qihuo Wei, Chiafu Chou, Frederic Zenhausern

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.

Original language	English (US)
Article number	41
Pages (from-to)	382-391
Number of pages	10
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5751
Issue number	I
DOIs	https://doi.org/10.1117/12.600207
State	Published - 2005
Event	Emerging Lithographic Technologies IX - San Jose, CA, United States Duration: Mar 1 2005 → Mar 3 2005

Keywords

2-dimensional oxidation
Crystalline silicon
Imprint lithography
Mask fabrication
Orientation dependent etching
Sidewall thin-film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Radiology Nuclear Medicine and imaging
Biomaterials

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10.1117/12.600207

Cite this

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title = "Mask fabrication towards sub-10 nm imprint lithography",

abstract = "We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.",

keywords = "2-dimensional oxidation, Crystalline silicon, Imprint lithography, Mask fabrication, Orientation dependent etching, Sidewall thin-film",

author = "Jian Gu and Jen, {Chun Ping} and Qihuo Wei and Chiafu Chou and Frederic Zenhausern",

year = "2005",

doi = "10.1117/12.600207",

language = "English (US)",

volume = "5751",

pages = "382--391",

journal = "Progress in Biomedical Optics and Imaging - Proceedings of SPIE",

issn = "1605-7422",

publisher = "SPIE",

number = "I",

note = "Emerging Lithographic Technologies IX ; Conference date: 01-03-2005 Through 03-03-2005",

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TY - JOUR

T1 - Mask fabrication towards sub-10 nm imprint lithography

AU - Gu, Jian

AU - Jen, Chun Ping

AU - Wei, Qihuo

AU - Chou, Chiafu

AU - Zenhausern, Frederic

PY - 2005

Y1 - 2005

N2 - We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.

AB - We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.

KW - 2-dimensional oxidation

KW - Crystalline silicon

KW - Imprint lithography

KW - Mask fabrication

KW - Orientation dependent etching

KW - Sidewall thin-film

UR - http://www.scopus.com/inward/record.url?scp=24644458810&partnerID=8YFLogxK

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U2 - 10.1117/12.600207

DO - 10.1117/12.600207

M3 - Conference article

SN - 1605-7422

VL - 5751

SP - 382

EP - 391

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

IS - I

M1 - 41

T2 - Emerging Lithographic Technologies IX

Y2 - 1 March 2005 through 3 March 2005

ER -

Mask fabrication towards sub-10 nm imprint lithography

Abstract

Keywords

ASJC Scopus subject areas

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