Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs

Terry Alford, Anil Indluru, Rajitha N P Vemuri

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs). The deformation is introduced by mounting the samples on cylindrical structures of varying radii creating tensile or compressive strains. The mechanical stresses are parallel and perpendicular to the length of the channel layer. Results reveal that, when the stresses are parallel to the channel length, mobilities increase under tensile stresses and reduce under compressive stresses; while, the effect on sub-threshold is contrary to this. However no changes are observed for mobilities and sub-threshold swings when the stresses are perpendicular to the channel length. The TFTs exhibit stability under the electromechanical stressing with no device failure observed over prolonged stress times.

Original languageEnglish (US)
Title of host publicationBandgap Engineering and Interfaces of Metal Oxides for Energy
Number of pages6
StatePublished - 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings


Conference2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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