Mechanistic study of the deposition of metals from HF solutions onto silicon wafers

H. G. Parks; J. B. Hiskey; K. Yoneshige

Mechanistic study of the deposition of metals from HF solutions onto silicon wafers

H. G. Parks, J. B. Hiskey, K. Yoneshige

Mining and Geological Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Process chemicals in use today are quite pure, depending on the grade used but can easily be contaminated with metal ions through improper handling or storage techniques. Such metal impurities, if deposited on wafer surfaces during processing can increase reverse-bias junction leakage, degrade oxide breakdown strength and increase metal oxide semiconductor capacitor leakage which in turn can adversely affect the function of ultra large scale integrated (ULSI) circuits. Because of these device effects and since metal contamination can come form several sources it is important to know the deposition level and mechanism on Si wafers from a given process solution. HF based process solution have been investigated due to their historical use in patterning, etching, and their increased use in advanced wafer cleaning processes.

Original language	English (US)
Title of host publication	Interface Control of Electrical, Chemical, and Mechanical Properties
Editors	Peter Borgesen, Klavs F. Jensen, Roger A. Pollak
Publisher	Publ by Materials Research Society
Pages	245-256
Number of pages	12
ISBN (Print)	1558992170
State	Published - 1994
Event	Proceedings of the Fall 1993 MRS Meeting - Boston, MA, USA Duration: Nov 29 1993 → Dec 3 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	318

Other

Other	Proceedings of the Fall 1993 MRS Meeting
City	Boston, MA, USA
Period	11/29/93 → 12/3/93

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Parks, H. G., Hiskey, J. B., & Yoneshige, K. (1994). Mechanistic study of the deposition of metals from HF solutions onto silicon wafers. In P. Borgesen, K. F. Jensen, & R. A. Pollak (Eds.), Interface Control of Electrical, Chemical, and Mechanical Properties (pp. 245-256). (Materials Research Society Symposium Proceedings; Vol. 318). Publ by Materials Research Society.

Mechanistic study of the deposition of metals from HF solutions onto silicon wafers. / Parks, H. G.; Hiskey, J. B.; Yoneshige, K.
Interface Control of Electrical, Chemical, and Mechanical Properties. ed. / Peter Borgesen; Klavs F. Jensen; Roger A. Pollak. Publ by Materials Research Society, 1994. p. 245-256 (Materials Research Society Symposium Proceedings; Vol. 318).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Parks, HG, Hiskey, JB & Yoneshige, K 1994, Mechanistic study of the deposition of metals from HF solutions onto silicon wafers. in P Borgesen, KF Jensen & RA Pollak (eds), Interface Control of Electrical, Chemical, and Mechanical Properties. Materials Research Society Symposium Proceedings, vol. 318, Publ by Materials Research Society, pp. 245-256, Proceedings of the Fall 1993 MRS Meeting, Boston, MA, USA, 11/29/93.

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AB - Process chemicals in use today are quite pure, depending on the grade used but can easily be contaminated with metal ions through improper handling or storage techniques. Such metal impurities, if deposited on wafer surfaces during processing can increase reverse-bias junction leakage, degrade oxide breakdown strength and increase metal oxide semiconductor capacitor leakage which in turn can adversely affect the function of ultra large scale integrated (ULSI) circuits. Because of these device effects and since metal contamination can come form several sources it is important to know the deposition level and mechanism on Si wafers from a given process solution. HF based process solution have been investigated due to their historical use in patterning, etching, and their increased use in advanced wafer cleaning processes.

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Mechanistic study of the deposition of metals from HF solutions onto silicon wafers

Abstract

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ASJC Scopus subject areas

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