TY - GEN
T1 - Metal/BaTiO/\beta-GaO Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown Field
AU - Xia, Zhanbo
AU - Wang, Caivu
AU - Chandrasekar, Hareesh
AU - Moore, Wyatt
AU - Lee, Aidan
AU - Kalarickal, Nidhin Kurian
AU - Yang, Fengyuan
AU - Rajan, Siddharth
N1 - Publisher Copyright: © 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - \beta-Ga203 is an emerging ultra-wide bandgap (4.7 eV) semiconductor with great potential for power electronics. The large breakdown electric field (6-8 MV/cm predicted) due to wide band gap combining with electron mobility of 250 -300 cm2/Vs offers a higher figure of merit for power electronic than SiC and GaN. In the absence of a p-type dopant, the low Schottky barrier height is a fundamental challenge for achieving the theoretically predicted limit for \beta-GaO power electronic devices. \beta-GaO Schottky barrier diodes with more than 1 kV breakdown voltage have been demonstrated but the maximum breakdown field in these devices was limited below 3.5 MV/cm due to metal to Ga203 Schottky barrier height (1.5-1.7 eV). In this work, we design and demonstrate the use of high dielectric heterojunctions to engineer electrostatics and transport within the diode and achieve high breakdown electric field (5.6 MV/cm) in a metal/BaTiO\beta-GaO heterojunction diode. This is the highest reported breakdown field for any \beta-GaO vertical diode, and it provides a general framework for future design of unipolar high voltage diodes based on wide and ultra-wide bandgap semiconductors.
AB - \beta-Ga203 is an emerging ultra-wide bandgap (4.7 eV) semiconductor with great potential for power electronics. The large breakdown electric field (6-8 MV/cm predicted) due to wide band gap combining with electron mobility of 250 -300 cm2/Vs offers a higher figure of merit for power electronic than SiC and GaN. In the absence of a p-type dopant, the low Schottky barrier height is a fundamental challenge for achieving the theoretically predicted limit for \beta-GaO power electronic devices. \beta-GaO Schottky barrier diodes with more than 1 kV breakdown voltage have been demonstrated but the maximum breakdown field in these devices was limited below 3.5 MV/cm due to metal to Ga203 Schottky barrier height (1.5-1.7 eV). In this work, we design and demonstrate the use of high dielectric heterojunctions to engineer electrostatics and transport within the diode and achieve high breakdown electric field (5.6 MV/cm) in a metal/BaTiO\beta-GaO heterojunction diode. This is the highest reported breakdown field for any \beta-GaO vertical diode, and it provides a general framework for future design of unipolar high voltage diodes based on wide and ultra-wide bandgap semiconductors.
UR - https://www.scopus.com/pages/publications/85083196957
UR - https://www.scopus.com/pages/publications/85083196957#tab=citedBy
U2 - 10.1109/DRC46940.2019.9046339
DO - 10.1109/DRC46940.2019.9046339
M3 - Conference contribution
T3 - Device Research Conference - Conference Digest, DRC
SP - 239
EP - 240
BT - 2019 Device Research Conference, DRC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Device Research Conference, DRC 2019
Y2 - 23 June 2019 through 26 June 2019
ER -