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Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR
J. Hader
,
J. V. Moloney
, O. Rubel
, S. C. Badescu
,
S. Johnson
,
S. W. Koch
Optical Sciences
Mathematics
Applied Mathematics - GIDP
Electrical and Computer Engineering
Photonics Innovation, Center for (CPhI)
Electrical Engineering
Solid State Electronics Research Center (CSSER)
Nano-Electronics, Arizona Institute of (AINE)
Engineering, Ira A. Fulton Schools of (IAFSE)
Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
REACH Institute
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
2
Scopus citations
Overview
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Physics
Energy Gaps (Solid State)
100%
Density Functional Theory
100%
Photoluminescence
50%
Density Functional Theory
50%
Energetics
50%
First-Principles
50%
Engineering
Band Anticrossing Model
100%
Spectral Region
33%
Defects
33%
Simplifies
33%
Good Agreement
33%
Energetics
33%
Material Characteristic
33%
Carrier Absorption
33%
Body Model
33%
Material Science
Density
100%
Bismuth
100%
Electronic Property
100%
Photoluminescence
33%
Earth and Planetary Sciences
Energy Gaps (Solid State)
100%
Density Functional Theory
100%
Density Functional Theory
50%
Photoluminescence
50%
Keyphrases
Band Anticrossing
100%
Bismuth Ions
33%