Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

S. Imhof; C. Bückers; A. Thränhardt; J. Hader; J. V. Moloney; S. W. Koch

doi:10.1088/0268-1242/23/12/125009

Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

S. Imhof
, C. Bückers
, A. Thränhardt
, J. Hader
, J. V. Moloney
, S. W. Koch

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

Original language	English (US)
Article number	125009
Journal	Semiconductor Science and Technology
Volume	23
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/23/12/125009
State	Published - Dec 1 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/23/12/125009

Cite this

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title = "Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells",

abstract = "Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.",

author = "S. Imhof and C. B{\"u}ckers and A. Thr{\"a}nhardt and J. Hader and Moloney, \{J. V.\} and Koch, \{S. W.\}",

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AU - Imhof, S.

AU - Bückers, C.

AU - Thränhardt, A.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

AB - Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

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U2 - 10.1088/0268-1242/23/12/125009

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M3 - Article

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

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Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

Abstract

ASJC Scopus subject areas

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