Microwave activation of dopants & solid phase epitaxy in silicon

D. C. Thompson, J. Decker, Terry Alford, J. W. Mayer, N. David Theodore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Microwave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for timedurations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781558999497
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings


Conference2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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