Moderated degradation enhancement of lateral pnp transistors due to measurement bias

Keyphrases

• Low Dose Rate 100%
• Measurement Bias 100%
• PNP Transistor 100%
• Device Simulation 50%
• Series Resistance 50%
• Metallization 50%
• Low Power Applications 50%
• Interface Traps 50%
• Gain Degradation 50%
• Carrier Injection 50%
• Design Margin 50%
• Oxide Trapped Charge 50%
• Field Effect 50%
• Irradiation Temperature 50%
• Trapped Charge 50%
• Hardness Assurance 50%
• High-energy Irradiation 50%
• Practical Consequences 50%

Engineering

• Dose Rate 100%
• Lateral Pnp Transistor 100%
• Metallizations 50%
• Series Resistance 50%
• Carrier Injection Level 50%
• Interface Trap 50%

Physics

• Transistor 100%
• Field Effect 50%