Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells

Izak Baranowski; Yongjie Zou; Hamidreza Esmaielpour; Ian Sellers; Dragica Vasileska; Stephen M. Goodnick

doi:https://doi.org/10.1117/12.2656991

Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells

Izak Baranowski, Yongjie Zou, Hamidreza Esmaielpour, Ian Sellers, Dragica Vasileska, Stephen M. Goodnick

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The ultrashort time scale carrier dynamics of photoexcited carriers in semiconductor nanostructures is critical in controlling energy loss processes, which is necessary to realize advanced concept photovoltaic devices based on concepts such as hot carrier extraction. Here, we compare ensemble Monte Carlo (EMC) simulation of carrier dynamics in semiconductor multi-quantum well (MQW) structures with continuous wave photoluminescence studies performed in type I and type II InGaAs quantum wells. We compare the effects of including nonequilibrium phonon effects as well as the inclusion of intervalley scattering in the EMC simulations on the simulated carrier distribution functions in comparison with the PL studies. EMC analysis shows that reduced carrier cooling is predominantly due to nonequilibrium LO phonons. For type II systems, additional effects due to real space transfer and delocalization of the photoexcited holes occur.

Original language	English (US)
Title of host publication	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII
Editors	Alexandre Freundlich, Stephane Collin, Karin Hinzer
Publisher	SPIE
ISBN (Electronic)	9781510659377
DOIs	https://doi.org/10.1117/12.2656991
State	Published - 2023
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII 2023 - San Francisco, United States Duration: Jan 30 2023 → Feb 1 2023

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12416

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII 2023
Country/Territory	United States
City	San Francisco
Period	1/30/23 → 2/1/23

Keywords

Ensemble Monte Carlo
Hot-carrier solar cell
LO phonon bottleneck
Type I
Type II heterostructures
multi-quantum well
ultrafast carrier relaxation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

https://doi.org/10.1117/12.2656991

Cite this

Baranowski, I., Zou, Y., Esmaielpour, H., Sellers, I., Vasileska, D., & Goodnick, S. M. (2023). Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells. In A. Freundlich, S. Collin, & K. Hinzer (Eds.), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII Article 1241604 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12416). SPIE. https://doi.org/10.1117/12.2656991

Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells. / Baranowski, Izak; Zou, Yongjie; Esmaielpour, Hamidreza et al.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII. ed. / Alexandre Freundlich; Stephane Collin; Karin Hinzer. SPIE, 2023. 1241604 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12416).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Baranowski, I, Zou, Y, Esmaielpour, H, Sellers, I, Vasileska, D & Goodnick, SM 2023, Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells. in A Freundlich, S Collin & K Hinzer (eds), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII., 1241604, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12416, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII 2023, San Francisco, United States, 1/30/23. https://doi.org/10.1117/12.2656991

Baranowski I, Zou Y, Esmaielpour H, Sellers I, Vasileska D , Goodnick SM. Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells. In Freundlich A, Collin S, Hinzer K, editors, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII. SPIE. 2023. 1241604. (Proceedings of SPIE - The International Society for Optical Engineering). doi: https://doi.org/10.1117/12.2656991

Baranowski, Izak ; Zou, Yongjie ; Esmaielpour, Hamidreza et al. / Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII. editor / Alexandre Freundlich ; Stephane Collin ; Karin Hinzer. SPIE, 2023. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "The ultrashort time scale carrier dynamics of photoexcited carriers in semiconductor nanostructures is critical in controlling energy loss processes, which is necessary to realize advanced concept photovoltaic devices based on concepts such as hot carrier extraction. Here, we compare ensemble Monte Carlo (EMC) simulation of carrier dynamics in semiconductor multi-quantum well (MQW) structures with continuous wave photoluminescence studies performed in type I and type II InGaAs quantum wells. We compare the effects of including nonequilibrium phonon effects as well as the inclusion of intervalley scattering in the EMC simulations on the simulated carrier distribution functions in comparison with the PL studies. EMC analysis shows that reduced carrier cooling is predominantly due to nonequilibrium LO phonons. For type II systems, additional effects due to real space transfer and delocalization of the photoexcited holes occur.",

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AB - The ultrashort time scale carrier dynamics of photoexcited carriers in semiconductor nanostructures is critical in controlling energy loss processes, which is necessary to realize advanced concept photovoltaic devices based on concepts such as hot carrier extraction. Here, we compare ensemble Monte Carlo (EMC) simulation of carrier dynamics in semiconductor multi-quantum well (MQW) structures with continuous wave photoluminescence studies performed in type I and type II InGaAs quantum wells. We compare the effects of including nonequilibrium phonon effects as well as the inclusion of intervalley scattering in the EMC simulations on the simulated carrier distribution functions in comparison with the PL studies. EMC analysis shows that reduced carrier cooling is predominantly due to nonequilibrium LO phonons. For type II systems, additional effects due to real space transfer and delocalization of the photoexcited holes occur.

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Monte Carlo Simulation of Ultrafast Carrier Relaxation in Type I and Type II InAs-based Quantum Wells

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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