Morphology of Au/GaAs interfaces

Z. Liliental-Weber; J. Washburn; N. Newman; W. E. Spicer; E. R. Weber

doi:10.1063/1.97318

Morphology of Au/GaAs interfaces

Z. Liliental-Weber, J. Washburn, N. Newman, W. E. Spicer, E. R. Weber

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25 Scopus citations

Abstract

The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

Original language	English (US)
Pages (from-to)	1514-1516
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	22
DOIs	https://doi.org/10.1063/1.97318
State	Published - 1986
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Morphology of Au/GaAs interfaces",

abstract = "The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.",

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year = "1986",

doi = "10.1063/1.97318",

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T1 - Morphology of Au/GaAs interfaces

AU - Liliental-Weber, Z.

AU - Washburn, J.

AU - Newman, N.

AU - Spicer, W. E.

AU - Weber, E. R.

PY - 1986

Y1 - 1986

N2 - The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

AB - The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

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DO - 10.1063/1.97318

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Morphology of Au/GaAs interfaces

Abstract

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