Nanopipes and inversion domains in high-quality GaN epitaxial layers

Fernando Ponce; W. T. Young; D. Cherns; J. W. Steeds; S. Nakamura

Nanopipes and inversion domains in high-quality GaN epitaxial layers

Fernando Ponce, W. T. Young, D. Cherns, J. W. Steeds, S. Nakamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
Publisher	Materials Research Society
Pages	405-410
Number of pages	6
Volume	449
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Other

Other	Proceedings of the 1996 MRS Fall Symposium
City	Boston, MA, USA
Period	12/2/96 → 12/6/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Nanopipes and inversion domains in high-quality GaN epitaxial layers. / Ponce, Fernando; Young, W. T.; Cherns, D. et al.
Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 405-410.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.",

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AU - Ponce, Fernando

AU - Young, W. T.

AU - Cherns, D.

AU - Steeds, J. W.

AU - Nakamura, S.

PY - 1997

Y1 - 1997

N2 - In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

AB - In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

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M3 - Conference contribution

VL - 449

SP - 405

EP - 410

BT - Materials Research Society Symposium - Proceedings

A2 - Ponce, F.A.

A2 - Moustakas, T.D.

A2 - Akasaki, I.

A2 - Monemar, B.A.

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 6 December 1996

ER -

Nanopipes and inversion domains in high-quality GaN epitaxial layers

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