Near-field radiative transfer between heavily doped SiGe at elevated temperatures

Z. M. Zhang; E. T. Enikov; T. Makansi

doi:10.1115/imece2011-62341

Near-field radiative transfer between heavily doped SiGe at elevated temperatures

Z. M. Zhang, E. T. Enikov, T. Makansi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. The fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

Original language	English (US)
Title of host publication	Heat and Mass Transport Processes
Publisher	American Society of Mechanical Engineers (ASME)
Pages	283-291
Number of pages	9
Edition	PARTS A AND B
ISBN (Print)	9780791854969
DOIs	https://doi.org/10.1115/imece2011-62341
State	Published - 2011
Event	ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011 - Denver, CO, United States Duration: Nov 11 2011 → Nov 17 2011

Publication series

Name	ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011
Number	PARTS A AND B
Volume	10

Other

Other	ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011
Country/Territory	United States
City	Denver, CO
Period	11/11/11 → 11/17/11

Keywords

Doped SiGe
High temperature
Nanoscale
Near field
Thermal radiation

ASJC Scopus subject areas

Mechanical Engineering

Access to Document

10.1115/imece2011-62341

Cite this

Zhang, Z. M., Enikov, E. T., & Makansi, T. (2011). Near-field radiative transfer between heavily doped SiGe at elevated temperatures. In Heat and Mass Transport Processes (PARTS A AND B ed., pp. 283-291). (ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011; Vol. 10, No. PARTS A AND B). American Society of Mechanical Engineers (ASME). https://doi.org/10.1115/imece2011-62341

Near-field radiative transfer between heavily doped SiGe at elevated temperatures. / Zhang, Z. M.; Enikov, E. T.; Makansi, T.
Heat and Mass Transport Processes. PARTS A AND B. ed. American Society of Mechanical Engineers (ASME), 2011. p. 283-291 (ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011; Vol. 10, No. PARTS A AND B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, ZM, Enikov, ET & Makansi, T 2011, Near-field radiative transfer between heavily doped SiGe at elevated temperatures. in Heat and Mass Transport Processes. PARTS A AND B edn, ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011, no. PARTS A AND B, vol. 10, American Society of Mechanical Engineers (ASME), pp. 283-291, ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011, Denver, CO, United States, 11/11/11. https://doi.org/10.1115/imece2011-62341

@inproceedings{49c7c3f4925249af8a714ce25c038ae2,

title = "Near-field radiative transfer between heavily doped SiGe at elevated temperatures",

abstract = "SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. The fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.",

keywords = "Doped SiGe, High temperature, Nanoscale, Near field, Thermal radiation",

author = "Zhang, {Z. M.} and Enikov, {E. T.} and T. Makansi",

year = "2011",

doi = "10.1115/imece2011-62341",

language = "English (US)",

isbn = "9780791854969",

series = "ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011",

publisher = "American Society of Mechanical Engineers (ASME)",

number = "PARTS A AND B",

pages = "283--291",

booktitle = "Heat and Mass Transport Processes",

edition = "PARTS A AND B",

note = "ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011 ; Conference date: 11-11-2011 Through 17-11-2011",

}

TY - GEN

T1 - Near-field radiative transfer between heavily doped SiGe at elevated temperatures

AU - Zhang, Z. M.

AU - Enikov, E. T.

AU - Makansi, T.

PY - 2011

Y1 - 2011

N2 - SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. The fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

AB - SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. The fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

KW - Doped SiGe

KW - High temperature

KW - Nanoscale

KW - Near field

KW - Thermal radiation

UR - http://www.scopus.com/inward/record.url?scp=84869150709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869150709&partnerID=8YFLogxK

U2 - 10.1115/imece2011-62341

DO - 10.1115/imece2011-62341

M3 - Conference contribution

SN - 9780791854969

T3 - ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011

SP - 283

EP - 291

BT - Heat and Mass Transport Processes

PB - American Society of Mechanical Engineers (ASME)

T2 - ASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011

Y2 - 11 November 2011 through 17 November 2011

ER -

Near-field radiative transfer between heavily doped SiGe at elevated temperatures

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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