Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies

M. M E Fahmi; Arif Khan; J. A. Griffin; G. L. Harris; Lawrence H. Robins; A. G. Birdwell; Youn Seon Kang; David Smith; Todd Steiner; S. Noor Mohammad

doi:10.1063/1.1630191

Nitrogen-activated bowing of dilute In _yGa _1-yAs _1-xN _x based on photoreflectance studies

M. M E Fahmi
, Arif Khan
, J. A. Griffin
, G. L. Harris
, Lawrence H. Robins
, A. G. Birdwell
, Youn Seon Kang
, David Smith
, Todd Steiner
, S. Noor Mohammad

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The dependence of the band gap (E _G) and higher critical-point energies of dilute-nitrogen Ga _1-yIn _yAs _1-xN _x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

Original language	English (US)
Pages (from-to)	7576-7580
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.1630191
State	Published - Dec 15 2003

ASJC Scopus subject areas

General Physics and Astronomy

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@article{0b476e2ffeba46478684ca5465cee02f,

title = "Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies",

abstract = "The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.",

author = "Fahmi, \{M. M E\} and Arif Khan and Griffin, \{J. A.\} and Harris, \{G. L.\} and Robins, \{Lawrence H.\} and Birdwell, \{A. G.\} and Kang, \{Youn Seon\} and David Smith and Todd Steiner and Mohammad, \{S. Noor\}",

year = "2003",

month = dec,

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doi = "10.1063/1.1630191",

language = "English (US)",

volume = "94",

pages = "7576--7580",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies

AU - Fahmi, M. M E

AU - Khan, Arif

AU - Griffin, J. A.

AU - Harris, G. L.

AU - Robins, Lawrence H.

AU - Birdwell, A. G.

AU - Kang, Youn Seon

AU - Smith, David

AU - Steiner, Todd

AU - Mohammad, S. Noor

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

AB - The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.

UR - https://www.scopus.com/pages/publications/0346935207

UR - https://www.scopus.com/pages/publications/0346935207#tab=citedBy

U2 - 10.1063/1.1630191

DO - 10.1063/1.1630191

M3 - Article

SN - 0021-8979

VL - 94

SP - 7576

EP - 7580

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Nitrogen-activated bowing of dilute In _yGa _1-yAs _1-xN _x based on photoreflectance studies

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