Nonlinear transport in quantum point contact structures

A. E. Krishnaswamy; Stephen Goodnick; M. N. Wybourne; C. Berven

doi:10.1016/S0167-9317(02)00618-4

Nonlinear transport in quantum point contact structures

A. E. Krishnaswamy
, Stephen Goodnick
, M. N. Wybourne
, C. Berven

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have investigated the magnetotransport properties under nonlinear conditions in quantum point contact structures fabricated on high mobility AlGaAs/GaAs two-dimensional electron gas (2DEG) layers. Nonlinearities in the I-V characteristics are observed at the threshold for conduction when biased initially from the tunneling regime as observed previously. We observe that this non-ideality is enhanced by a magnetic field normal to the plane of the 2DEG. This behavior is interpreted in terms of corrections to the Landauer model extended to nonequilibrium conditions.

Original language	English (US)
Pages (from-to)	123-127
Number of pages	5
Journal	Microelectronic Engineering
Volume	63
Issue number	1-3
DOIs	https://doi.org/10.1016/S0167-9317(02)00618-4
State	Published - Aug 2002

Keywords

Nanostructures
Quantum dots
Semiconductors
Transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(02)00618-4

Cite this

@article{1cfa966b7d7e4e68904a30180d31f05f,

title = "Nonlinear transport in quantum point contact structures",

abstract = "We have investigated the magnetotransport properties under nonlinear conditions in quantum point contact structures fabricated on high mobility AlGaAs/GaAs two-dimensional electron gas (2DEG) layers. Nonlinearities in the I-V characteristics are observed at the threshold for conduction when biased initially from the tunneling regime as observed previously. We observe that this non-ideality is enhanced by a magnetic field normal to the plane of the 2DEG. This behavior is interpreted in terms of corrections to the Landauer model extended to nonequilibrium conditions.",

keywords = "Nanostructures, Quantum dots, Semiconductors, Transport",

author = "Krishnaswamy, \{A. E.\} and Stephen Goodnick and Wybourne, \{M. N.\} and C. Berven",

note = "Funding Information: The authors would like to thank J. Bird for advice and help with aspects of the measurements reported here, and J. Simmons for samples. The authors are also grateful for support provided by the Office of Naval Research.",

year = "2002",

month = aug,

doi = "10.1016/S0167-9317(02)00618-4",

language = "English (US)",

volume = "63",

pages = "123--127",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Nonlinear transport in quantum point contact structures

AU - Krishnaswamy, A. E.

AU - Goodnick, Stephen

AU - Wybourne, M. N.

AU - Berven, C.

N1 - Funding Information: The authors would like to thank J. Bird for advice and help with aspects of the measurements reported here, and J. Simmons for samples. The authors are also grateful for support provided by the Office of Naval Research.

PY - 2002/8

Y1 - 2002/8

N2 - We have investigated the magnetotransport properties under nonlinear conditions in quantum point contact structures fabricated on high mobility AlGaAs/GaAs two-dimensional electron gas (2DEG) layers. Nonlinearities in the I-V characteristics are observed at the threshold for conduction when biased initially from the tunneling regime as observed previously. We observe that this non-ideality is enhanced by a magnetic field normal to the plane of the 2DEG. This behavior is interpreted in terms of corrections to the Landauer model extended to nonequilibrium conditions.

AB - We have investigated the magnetotransport properties under nonlinear conditions in quantum point contact structures fabricated on high mobility AlGaAs/GaAs two-dimensional electron gas (2DEG) layers. Nonlinearities in the I-V characteristics are observed at the threshold for conduction when biased initially from the tunneling regime as observed previously. We observe that this non-ideality is enhanced by a magnetic field normal to the plane of the 2DEG. This behavior is interpreted in terms of corrections to the Landauer model extended to nonequilibrium conditions.

KW - Nanostructures

KW - Quantum dots

KW - Semiconductors

KW - Transport

UR - https://www.scopus.com/pages/publications/0036679612

UR - https://www.scopus.com/pages/publications/0036679612#tab=citedBy

U2 - 10.1016/S0167-9317(02)00618-4

DO - 10.1016/S0167-9317(02)00618-4

M3 - Article

SN - 0167-9317

VL - 63

SP - 123

EP - 127

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-3

ER -

Nonlinear transport in quantum point contact structures

Abstract

Keywords

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