TY - JOUR
T1 - Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures
AU - Ninoi, Koji
AU - Kamiya, Hajime
AU - Fuchi, Shingo
AU - Tabuchi, Masao
AU - Takeda, Yoshikazu
N1 - Funding Information: This work was supported in part by the Grant-in-Aid for Scientific Research (S) # 18106001 from the Japan Society for the Promotion of Science.
PY - 2011/3/1
Y1 - 2011/3/1
N2 - A novel system for in-situ X-ray CTR scattering measurement on in-situ observation of group-III nitride semiconductor growth was constructed by setting an OMVPE reactor at the sample position of the X-ray diffractometer which was developed for in-situ measurement of growing semiconductor crystals. For in-situ observation of the growth of semiconductor, firstly, it is necessary to investigate the capabilities of the new system. In this work, after the safety check of the OMVPE reactor with thin Be windows, the capability of the new system as an X-ray diffractometer and a growth reactor of group-III nitride semiconductors was tested. After the GaInN layer was deposited successfully, the X-ray CTR scattering measurement was conducted at the growth temperature. The different CTR spectra measured at the growth temperature and at room-temperature after the growth were obtained. It indicates that the status of the crystal at growth conditions can be analyzed by using the new system. Therefore, the new system can be developed for in-situ observation of the OMVPE growth of the group-III nitride semiconductors.
AB - A novel system for in-situ X-ray CTR scattering measurement on in-situ observation of group-III nitride semiconductor growth was constructed by setting an OMVPE reactor at the sample position of the X-ray diffractometer which was developed for in-situ measurement of growing semiconductor crystals. For in-situ observation of the growth of semiconductor, firstly, it is necessary to investigate the capabilities of the new system. In this work, after the safety check of the OMVPE reactor with thin Be windows, the capability of the new system as an X-ray diffractometer and a growth reactor of group-III nitride semiconductors was tested. After the GaInN layer was deposited successfully, the X-ray CTR scattering measurement was conducted at the growth temperature. The different CTR spectra measured at the growth temperature and at room-temperature after the growth were obtained. It indicates that the status of the crystal at growth conditions can be analyzed by using the new system. Therefore, the new system can be developed for in-situ observation of the OMVPE growth of the group-III nitride semiconductors.
KW - A1. Crystal structure
KW - A1. High resolution X-ray diffraction
KW - A1. In-situ observation
KW - A3. Organometallic vapor phase epitaxy
KW - B2. Semiconducting IIIV materials
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U2 - 10.1016/j.jcrysgro.2010.10.201
DO - 10.1016/j.jcrysgro.2010.10.201
M3 - Article
SN - 0022-0248
VL - 318
SP - 1139
EP - 1142
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -