Abstract
The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.
| Original language | English (US) |
|---|---|
| Title of host publication | Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 |
| Pages | 172-175 |
| Number of pages | 4 |
| State | Published - 2011 |
| Externally published | Yes |
| Event | Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States Duration: Jun 13 2011 → Jun 16 2011 |
Publication series
| Name | Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 |
|---|---|
| Volume | 2 |
Other
| Other | Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 |
|---|---|
| Country/Territory | United States |
| City | Boston, MA |
| Period | 6/13/11 → 6/16/11 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering