Observation of electron and hole velocity overshoots in an Al 0.3Ga0.7As-based p-i-n semiconductor nanostructure

W. Liang; Kong-Thon Tsen

doi:10.1088/0268-1242/19/4/007

Observation of electron and hole velocity overshoots in an Al _0.3Ga_0.7As-based p-i-n semiconductor nanostructure

W. Liang
, Kong-Thon Tsen

Research output: Contribution to journal › Article › peer-review

Abstract

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al_0.3Ga_0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

Original language	English (US)
Pages (from-to)	S20-S22
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/007
State	Published - Apr 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/19/4/007

Cite this

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title = "Observation of electron and hole velocity overshoots in an Al 0.3Ga0.7As-based p-i-n semiconductor nanostructure",

abstract = "We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.",

author = "W. Liang and Kong-Thon Tsen",

year = "2004",

month = apr,

doi = "10.1088/0268-1242/19/4/007",

language = "English (US)",

volume = "19",

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T1 - Observation of electron and hole velocity overshoots in an Al 0.3Ga0.7As-based p-i-n semiconductor nanostructure

AU - Liang, W.

AU - Tsen, Kong-Thon

PY - 2004/4

Y1 - 2004/4

N2 - We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

AB - We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

UR - https://www.scopus.com/pages/publications/1942516996

UR - https://www.scopus.com/pages/publications/1942516996#tab=citedBy

U2 - 10.1088/0268-1242/19/4/007

DO - 10.1088/0268-1242/19/4/007

M3 - Article

SN - 0268-1242

VL - 19

SP - S20-S22

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4 SPEC. ISS.

ER -

Observation of electron and hole velocity overshoots in an Al _0.3Ga_0.7As-based p-i-n semiconductor nanostructure

Abstract

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