Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells

R. Jin; K. Okada; G. Khitrova; H. M. Gibbs; M. Pereira; S. W. Koch; N. Peyghambarian

doi:10.1063/1.108414

Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells

R. Jin, K. Okada, G. Khitrova, H. M. Gibbs, M. Pereira, S. W. Koch, N. Peyghambarian

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38 Scopus citations

Abstract

Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using pump-probe spectroscopy. It is found that the carrier density required for absorption saturation in a strained InGaAs/GaAs MQW is about a factor of two lower than that in an unstrained GaAs/AlGaAs MQW with similar structures, while the nonlinear index change per carrier is about the same for both samples. The decrease in the saturation density in the strained MQW is explained by the increase of the top valence-band curvature caused by the compressive strain in the quantum well.

Original language	English (US)
Pages (from-to)	1745-1747
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	15
DOIs	https://doi.org/10.1063/1.108414
State	Published - 1992

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Physics and Astronomy (miscellaneous)

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title = "Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells",

abstract = "Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using pump-probe spectroscopy. It is found that the carrier density required for absorption saturation in a strained InGaAs/GaAs MQW is about a factor of two lower than that in an unstrained GaAs/AlGaAs MQW with similar structures, while the nonlinear index change per carrier is about the same for both samples. The decrease in the saturation density in the strained MQW is explained by the increase of the top valence-band curvature caused by the compressive strain in the quantum well.",

author = "R. Jin and K. Okada and G. Khitrova and Gibbs, {H. M.} and M. Pereira and Koch, {S. W.} and N. Peyghambarian",

year = "1992",

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T1 - Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells

AU - Jin, R.

AU - Okada, K.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Pereira, M.

AU - Koch, S. W.

AU - Peyghambarian, N.

PY - 1992

Y1 - 1992

N2 - Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using pump-probe spectroscopy. It is found that the carrier density required for absorption saturation in a strained InGaAs/GaAs MQW is about a factor of two lower than that in an unstrained GaAs/AlGaAs MQW with similar structures, while the nonlinear index change per carrier is about the same for both samples. The decrease in the saturation density in the strained MQW is explained by the increase of the top valence-band curvature caused by the compressive strain in the quantum well.

AB - Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using pump-probe spectroscopy. It is found that the carrier density required for absorption saturation in a strained InGaAs/GaAs MQW is about a factor of two lower than that in an unstrained GaAs/AlGaAs MQW with similar structures, while the nonlinear index change per carrier is about the same for both samples. The decrease in the saturation density in the strained MQW is explained by the increase of the top valence-band curvature caused by the compressive strain in the quantum well.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells

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