@inproceedings{ed994838e4244ba8a805b20fb8bc97a1,
title = "Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition",
abstract = "A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20\% reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.",
keywords = "III-V semiconductors, Metalorganic chemical vapor deposition, deep ultraviolet, lasers, optical pumping",
author = "Liu, \{Yuh Shiuan\} and Kao, \{Tsung Ting\} and Satter, \{Md Mahbub\} and Zachary Lochner and Li, \{Xiao Hang\} and Shen, \{Shyh Chiang\} and Yoder, \{P. Douglas\} and Theeradetch Detchprohm and Dupuis, \{Russell D.\} and Yong Wei and Hongen Xie and Alec Fischer and Fernando Ponce",
year = "2014",
doi = "10.1117/12.2036835",
language = "English (US)",
isbn = "9780819499158",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Novel In-Plane Semiconductor Lasers XIII",
note = "Novel In-Plane Semiconductor Lasers XIII ; Conference date: 03-02-2014 Through 06-02-2014",
}