p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

R. A. Kiehl; A. C. Gossard

doi:10.1109/EDL.1984.25970

p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

R. A. Kiehl
, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 10¹² cm^–2 and a 77K mobility of 1800 cm²/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

Original language	English (US)
Pages (from-to)	420-422
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1984.25970
State	Published - Oct 1984
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.25970

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title = "p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates",

abstract = "The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.",

author = "Kiehl, \{R. A.\} and Gossard, \{A. C.\}",

year = "1984",

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doi = "10.1109/EDL.1984.25970",

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journal = "IEEE Electron Device Letters",

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T1 - p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

AU - Kiehl, R. A.

AU - Gossard, A. C.

PY - 1984/10

Y1 - 1984/10

N2 - The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

AB - The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

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UR - https://www.scopus.com/pages/publications/84913871147#tab=citedBy

U2 - 10.1109/EDL.1984.25970

DO - 10.1109/EDL.1984.25970

M3 - Article

SN - 0741-3106

VL - 5

SP - 420

EP - 422

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

Abstract

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