p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET.

Richard A. Kiehl; Sandip Tiwari; Steven L. Wright; M. A. Olson

p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET.

Richard A. Kiehl, Sandip Tiwari, Steven L. Wright, M. A. Olson

Research output: Contribution to journal › Article › peer-review

Abstract

A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm**2/V-s hold mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2. 0- mu m gate lengths and 6. 0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.

Original language	English (US)
Journal	Electron device letters
Volume	9
Issue number	6
State	Published - Jan 1 1988
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET.",

abstract = "A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm**2/V-s hold mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2. 0- mu m gate lengths and 6. 0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.",

author = "Kiehl, {Richard A.} and Sandip Tiwari and Wright, {Steven L.} and Olson, {M. A.}",

year = "1988",

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T1 - p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET.

AU - Kiehl, Richard A.

AU - Tiwari, Sandip

AU - Wright, Steven L.

AU - Olson, M. A.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm**2/V-s hold mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2. 0- mu m gate lengths and 6. 0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.

AB - A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm**2/V-s hold mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2. 0- mu m gate lengths and 6. 0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.

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M3 - Article

SN - 0193-8576

VL - 9

JO - Electron device letters

JF - Electron device letters

IS - 6

ER -

p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET.

Abstract

ASJC Scopus subject areas

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