Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley-Read-Hall defect level and intrinsic doping concentration of the GaInAsSbBi.