Preparation of iridium films by liquid source metalorganic chemical vapor deposition

Sandwip Dey; Jaydeb Goswami; Chang Gong Wang; Prashant Majhi

doi:10.1143/jjap.38.l1052

Preparation of iridium films by liquid source metalorganic chemical vapor deposition

Sandwip Dey
, Jaydeb Goswami
, Chang Gong Wang
, Prashant Majhi

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH₃CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrO_x/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.

Original language	English (US)
Pages (from-to)	L1052-L1054
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	38
Issue number	9 A/B
DOIs	https://doi.org/10.1143/jjap.38.l1052
State	Published - Sep 15 1999

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.38.l1052

Cite this

@article{e7c8c3bf5c8049ac8f6fbbc610bec59e,

title = "Preparation of iridium films by liquid source metalorganic chemical vapor deposition",

abstract = "A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.",

author = "Sandwip Dey and Jaydeb Goswami and Wang, \{Chang Gong\} and Prashant Majhi",

year = "1999",

month = sep,

day = "15",

doi = "10.1143/jjap.38.l1052",

language = "English (US)",

volume = "38",

pages = "L1052--L1054",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 A/B",

}

TY - JOUR

T1 - Preparation of iridium films by liquid source metalorganic chemical vapor deposition

AU - Dey, Sandwip

AU - Goswami, Jaydeb

AU - Wang, Chang Gong

AU - Majhi, Prashant

PY - 1999/9/15

Y1 - 1999/9/15

N2 - A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.

AB - A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 °C from tetrahydrofuran (THF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD = cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 °C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 μΩcm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.

UR - https://www.scopus.com/pages/publications/0033309513

UR - https://www.scopus.com/pages/publications/0033309513#tab=citedBy

U2 - 10.1143/jjap.38.l1052

DO - 10.1143/jjap.38.l1052

M3 - Article

SN - 0021-4922

VL - 38

SP - L1052-L1054

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 9 A/B

ER -

Preparation of iridium films by liquid source metalorganic chemical vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this