TY - GEN
T1 - Process variation model and analysis for domain wall-magnetic tunnel junction logic
AU - Hu, Xuan
AU - Edwards, Alexander J.
AU - Xiao, T. Patrick
AU - Bennett, Christopher H.
AU - Incorvia, Jean Anne C.
AU - Marinella, Matthew J.
AU - Friedman, Joseph S.
N1 - Publisher Copyright: © 2020 IEEE
PY - 2020
Y1 - 2020
N2 - The domain wall-magnetic tunnel junction (DW-MTJ) is a spintronic device that enables efficient logic circuit design because of its low energy consumption, small size, and non-volatility. Furthermore, the DW-MTJ is one of the few spintronic devices for which a direct cascading mechanism is experimentally demonstrated without any extra buffers; this enables potential design and fabrication of a large-scale DW-MTJ logic system. However, DW-MTJ logic relies on the conversion between electrical signals and magnetic states which is sensitive to process imperfection. Therefore, it is important to analyze the robustness of such DW-MTJ devices to anticipate the system reliability before fabrication. Here we propose a new DW-MTJ model that integrates the impacts of process variation to enable the analysis and optimization of DW-MTJ logic. This will allow circuit and device design that enhances the robustness of DW-MTJ logic and advances the development of energy-efficient spintronic computing systems.
AB - The domain wall-magnetic tunnel junction (DW-MTJ) is a spintronic device that enables efficient logic circuit design because of its low energy consumption, small size, and non-volatility. Furthermore, the DW-MTJ is one of the few spintronic devices for which a direct cascading mechanism is experimentally demonstrated without any extra buffers; this enables potential design and fabrication of a large-scale DW-MTJ logic system. However, DW-MTJ logic relies on the conversion between electrical signals and magnetic states which is sensitive to process imperfection. Therefore, it is important to analyze the robustness of such DW-MTJ devices to anticipate the system reliability before fabrication. Here we propose a new DW-MTJ model that integrates the impacts of process variation to enable the analysis and optimization of DW-MTJ logic. This will allow circuit and device design that enhances the robustness of DW-MTJ logic and advances the development of energy-efficient spintronic computing systems.
KW - Device model
KW - Domain wall
KW - Magnetic tunnel junction
KW - Process variation
KW - Spintronic logic
UR - https://www.scopus.com/pages/publications/85109345139
UR - https://www.scopus.com/pages/publications/85109345139#tab=citedBy
M3 - Conference contribution
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
Y2 - 10 October 2020 through 21 October 2020
ER -