Quantum hydrodynamic model for semiconductor devices

Carl L. Gardner

doi:10.1137/S0036139992240425

Quantum hydrodynamic model for semiconductor devices

Carl L. Gardner

Research output: Contribution to journal › Article › peer-review

521 Scopus citations

Abstract

Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR is interpreted in terms of the time spent by electrons in the quantum well.

Original language	English (US)
Pages (from-to)	409-427
Number of pages	19
Journal	SIAM Journal on Applied Mathematics
Volume	54
Issue number	2
DOIs	https://doi.org/10.1137/S0036139992240425
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Applied Mathematics

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10.1137/S0036139992240425

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title = "Quantum hydrodynamic model for semiconductor devices",

abstract = "Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR is interpreted in terms of the time spent by electrons in the quantum well.",

author = "Gardner, \{Carl L.\}",

year = "1994",

doi = "10.1137/S0036139992240425",

language = "English (US)",

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pages = "409--427",

journal = "SIAM Journal on Applied Mathematics",

issn = "0036-1399",

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number = "2",

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T1 - Quantum hydrodynamic model for semiconductor devices

AU - Gardner, Carl L.

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Y1 - 1994

N2 - Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR is interpreted in terms of the time spent by electrons in the quantum well.

AB - Simulations of a resonant tunneling diode are presented that show charge buildup in the quantum well and negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the full QHD equations to show NDR in the resonant tunneling diode. The computed current-voltage curve agrees quantitatively with experimental measurements. NDR is interpreted in terms of the time spent by electrons in the quantum well.

UR - https://www.scopus.com/pages/publications/0028413338

UR - https://www.scopus.com/pages/publications/0028413338#tab=citedBy

U2 - 10.1137/S0036139992240425

DO - 10.1137/S0036139992240425

M3 - Article

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VL - 54

SP - 409

EP - 427

JO - SIAM Journal on Applied Mathematics

JF - SIAM Journal on Applied Mathematics

IS - 2

ER -

Quantum hydrodynamic model for semiconductor devices

Abstract

ASJC Scopus subject areas

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