Recent advances in III-nitride UV materials and Devices

Z. Y. Fan; J. Y. Lin; H. X. Jiang

Recent advances in III-nitride UV materials and Devices

Z. Y. Fan, J. Y. Lin, H. X. Jiang

Research output: Contribution to conference › Paper › peer-review

Abstract

Some of the recent progresses in epitaxial growth, fundamental studies of high Al content AlGaN alloys with Si and Mg doping, and UV LED fabrication are presented. For Si doped Al _0.7Ga _0.3N, a room temperature ntype resistivity as low as 0.0075 Ωcm has been obtained. The resistivity was observed to increase by one order of magnitude as the Al content was increased by about 8%, due to the deepening of the Si donor level. We have also achieved n-AIN with a free electron concentration and mobility of about 1.0 × 10 ¹⁷cm ^-3 and 2 cm ²/Vs, respectively. For Mg doping, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. The Mg acceptor activation energy in Al _xGa _1-xN as a function of the Al content was extrapolated for the entire AlN composition range. Finally, the results of our UV (317 nm) LEDs are reported, and the current crowding effect was discussed.

Original language	English (US)
Pages	24-33
Number of pages	10
State	Published - 2004
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 9 2004 → May 14 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	5/9/04 → 5/14/04

ASJC Scopus subject areas

General Engineering

Cite this

Recent advances in III-nitride UV materials and Devices. / Fan, Z. Y.; Lin, J. Y.; Jiang, H. X.
2004. 24-33 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

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abstract = "Some of the recent progresses in epitaxial growth, fundamental studies of high Al content AlGaN alloys with Si and Mg doping, and UV LED fabrication are presented. For Si doped Al 0.7Ga 0.3N, a room temperature ntype resistivity as low as 0.0075 Ωcm has been obtained. The resistivity was observed to increase by one order of magnitude as the Al content was increased by about 8%, due to the deepening of the Si donor level. We have also achieved n-AIN with a free electron concentration and mobility of about 1.0 × 10 17cm -3 and 2 cm 2/Vs, respectively. For Mg doping, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. The Mg acceptor activation energy in Al xGa 1-xN as a function of the Al content was extrapolated for the entire AlN composition range. Finally, the results of our UV (317 nm) LEDs are reported, and the current crowding effect was discussed.",

author = "Fan, {Z. Y.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2004",

language = "English (US)",

pages = "24--33",

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T1 - Recent advances in III-nitride UV materials and Devices

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AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2004

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N2 - Some of the recent progresses in epitaxial growth, fundamental studies of high Al content AlGaN alloys with Si and Mg doping, and UV LED fabrication are presented. For Si doped Al 0.7Ga 0.3N, a room temperature ntype resistivity as low as 0.0075 Ωcm has been obtained. The resistivity was observed to increase by one order of magnitude as the Al content was increased by about 8%, due to the deepening of the Si donor level. We have also achieved n-AIN with a free electron concentration and mobility of about 1.0 × 10 17cm -3 and 2 cm 2/Vs, respectively. For Mg doping, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. The Mg acceptor activation energy in Al xGa 1-xN as a function of the Al content was extrapolated for the entire AlN composition range. Finally, the results of our UV (317 nm) LEDs are reported, and the current crowding effect was discussed.

AB - Some of the recent progresses in epitaxial growth, fundamental studies of high Al content AlGaN alloys with Si and Mg doping, and UV LED fabrication are presented. For Si doped Al 0.7Ga 0.3N, a room temperature ntype resistivity as low as 0.0075 Ωcm has been obtained. The resistivity was observed to increase by one order of magnitude as the Al content was increased by about 8%, due to the deepening of the Si donor level. We have also achieved n-AIN with a free electron concentration and mobility of about 1.0 × 10 17cm -3 and 2 cm 2/Vs, respectively. For Mg doping, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. The Mg acceptor activation energy in Al xGa 1-xN as a function of the Al content was extrapolated for the entire AlN composition range. Finally, the results of our UV (317 nm) LEDs are reported, and the current crowding effect was discussed.

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T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

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ER -

Recent advances in III-nitride UV materials and Devices

Abstract

Conference

ASJC Scopus subject areas

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