Resonance Raman scattering in InSb: Deformation potentials and interference effects at the E1 gap

This paper presents a reevaluation of the optical-phonon deformation potential constants near the E1 gap of InSb. The absolute values of the deformation potentials d1,05 and d3,05 are obtained from a measurement of the Raman efficiency for allowed LO-phonon scattering and a fit of previous uniaxial-stress experiments by using new ellipsometric data for the optical susceptibility. The signs of the deformation potentials are deduced from a study of the interference between the amplitudes for forbidden and allowed LO-Raman scattering. The values obtained are d1,05=-16.24 eV and d3,05=32.98 eV. The study of the interference also provides information about the relative weight of different sources of forbidden LO-Raman scattering.