Semiconductor pattern analysis with induced polarization

Tao Chen; Tom Muster; Seung Hune Yang

doi:10.1117/12.632240

Semiconductor pattern analysis with induced polarization

Tao Chen, Tom Muster, Seung Hune Yang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

Original language	English (US)
Article number	59921L
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5992
Issue number	1
DOIs	https://doi.org/10.1117/12.632240
State	Published - 2005
Event	25th Annual BACUS Symposium on Photomask Technology - Monterey, CA, United States Duration: Oct 4 2005 → Oct 7 2005

Keywords

High resolution
Induced polarization imaging
Near-field microscope
Solid immersion lens (SIL)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.632240

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title = "Semiconductor pattern analysis with induced polarization",

abstract = "Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.",

keywords = "High resolution, Induced polarization imaging, Near-field microscope, Solid immersion lens (SIL)",

author = "Tao Chen and Tom Muster and Yang, {Seung Hune}",

year = "2005",

doi = "10.1117/12.632240",

language = "English (US)",

volume = "5992",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "1",

note = "25th Annual BACUS Symposium on Photomask Technology ; Conference date: 04-10-2005 Through 07-10-2005",

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TY - JOUR

T1 - Semiconductor pattern analysis with induced polarization

AU - Chen, Tao

AU - Muster, Tom

AU - Yang, Seung Hune

PY - 2005

Y1 - 2005

N2 - Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

AB - Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

KW - High resolution

KW - Induced polarization imaging

KW - Near-field microscope

KW - Solid immersion lens (SIL)

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DO - 10.1117/12.632240

M3 - Conference article

SN - 0277-786X

VL - 5992

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 1

M1 - 59921L

T2 - 25th Annual BACUS Symposium on Photomask Technology

Y2 - 4 October 2005 through 7 October 2005

ER -

Semiconductor pattern analysis with induced polarization

Abstract

Keywords

ASJC Scopus subject areas

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