Shallow trap states in pentacene thin films from molecular sliding

Joo H. Kang; Demetrio Da Silva Filho; Jean Luc Bredas; X. Y. Zhu

doi:10.1063/1.1900944

Shallow trap states in pentacene thin films from molecular sliding

Joo H. Kang, Demetrio Da Silva Filho, Jean Luc Bredas, X. Y. Zhu

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).

Original language	English (US)
Article number	152115
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1900944
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Shallow trap states in pentacene thin films from molecular sliding",

abstract = "Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).",

author = "Kang, {Joo H.} and {Da Silva Filho}, Demetrio and Bredas, {Jean Luc} and Zhu, {X. Y.}",

note = "Funding Information: This work was supported by the National Science Foundation through Grant No. DMR 0238307 and by the MRSEC Program under Award No. DMR-0212302.",

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T1 - Shallow trap states in pentacene thin films from molecular sliding

AU - Kang, Joo H.

AU - Da Silva Filho, Demetrio

AU - Bredas, Jean Luc

AU - Zhu, X. Y.

N1 - Funding Information: This work was supported by the National Science Foundation through Grant No. DMR 0238307 and by the MRSEC Program under Award No. DMR-0212302.

PY - 2005

Y1 - 2005

N2 - Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).

AB - Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).

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Shallow trap states in pentacene thin films from molecular sliding

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