Si/SiC UHV direct wafer bonded interfazce structure

M. J. Kim; Hong Xu; R. J. Liu; M. J. Cox; Ray Carpenter

Si/SiC UHV direct wafer bonded interfazce structure

M. J. Kim, Hong Xu, R. J. Liu, M. J. Cox, Ray Carpenter

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Volume	587
State	Published - 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Si/SiC UHV direct wafer bonded interfazce structure",

abstract = "Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.",

author = "Kim, {M. J.} and Hong Xu and Liu, {R. J.} and Cox, {M. J.} and Ray Carpenter",

year = "2000",

language = "English (US)",

volume = "587",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - CHAP

T1 - Si/SiC UHV direct wafer bonded interfazce structure

AU - Kim, M. J.

AU - Xu, Hong

AU - Liu, R. J.

AU - Cox, M. J.

AU - Carpenter, Ray

PY - 2000

Y1 - 2000

N2 - Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

AB - Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at 1 MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.

UR - http://www.scopus.com/inward/record.url?scp=33750916005&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750916005&partnerID=8YFLogxK

M3 - Chapter

VL - 587

BT - Materials Research Society Symposium - Proceedings

ER -

Si/SiC UHV direct wafer bonded interfazce structure

Abstract

ASJC Scopus subject areas

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