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Stress relaxation in uniquely oriented SiGe/Si epitaxial layers
M. E. Ware
,
Robert Nemanich
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Dive into the research topics of 'Stress relaxation in uniquely oriented SiGe/Si epitaxial layers'. Together they form a unique fingerprint.
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Keyphrases
SiGe
100%
Stress Relaxation
100%
Si Substrate
100%
Surface Morphology
66%
Substrate Orientation
66%
As-deposited
66%
Crystal Orientation
33%
Atomic Force Microscopy
33%
Epitaxial
33%
Raman Spectroscopy
33%
Relaxation Process
33%
Misfit Dislocation
33%
Strain Relaxation
33%
Raman Scattering
33%
Thermal Annealing
33%
SiGe Layer
33%
Structure-oriented
33%
Step Edge
33%
Altered Layer
33%
Material Science
Film
100%
Stress Relaxation
100%
Epitaxial Film
100%
Surface Morphology
50%
Raman Spectroscopy
25%
Dislocation (Crystal)
25%
Annealing
25%
Atomic Force Microscopy
25%