Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1109/CLEO.2007.4453595

Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2007
Publisher	Optical Society of America
ISBN (Print)	1557528349, 9781557528346
DOIs	https://doi.org/10.1109/CLEO.2007.4453595
State	Published - 2007
Event	Conference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States Duration: May 6 2007 → May 6 2007

Publication series

Name	Optics InfoBase Conference Papers

Conference

Conference	Conference on Lasers and Electro-Optics, CLEO 2007
Country/Territory	United States
City	Baltimore, MD
Period	5/6/07 → 5/6/07

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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10.1109/CLEO.2007.4453595

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Hader, J , Moloney, JV & Koch, SW 2007, Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. in Conference on Lasers and Electro-Optics, CLEO 2007. Optics InfoBase Conference Papers, Optical Society of America, Conference on Lasers and Electro-Optics, CLEO 2007, Baltimore, MD, United States, 5/6/07. https://doi.org/10.1109/CLEO.2007.4453595

@inproceedings{d70632e486904e46832aef7535fd4e67,

title = "Structural dependence of optical gain and carrier losses in InGaN quantum well lasers",

abstract = "Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.",

author = "J. Hader and Moloney, \{J. V.\} and Koch, \{S. W.\}",

year = "2007",

doi = "10.1109/CLEO.2007.4453595",

language = "English (US)",

isbn = "1557528349",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2007",

note = "Conference on Lasers and Electro-Optics, CLEO 2007 ; Conference date: 06-05-2007 Through 06-05-2007",

}

TY - GEN

T1 - Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

PY - 2007

Y1 - 2007

N2 - Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

AB - Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

UR - https://www.scopus.com/pages/publications/84898973870

UR - https://www.scopus.com/pages/publications/84898973870#tab=citedBy

UR - https://www.scopus.com/pages/publications/82955220509

UR - https://www.scopus.com/pages/publications/82955220509#tab=citedBy

U2 - 10.1109/CLEO.2007.4453595

DO - 10.1109/CLEO.2007.4453595

M3 - Conference contribution

SN - 1557528349

SN - 9781557528346

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2007

PB - Optical Society of America

T2 - Conference on Lasers and Electro-Optics, CLEO 2007

Y2 - 6 May 2007 through 6 May 2007

ER -

Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Abstract

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Conference

ASJC Scopus subject areas

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