Abstract
X-ray absorption spectroscopy and vacuum ultra-violet spectroscopic ellipsometry are used to study the electronic structure of complex oxides comprised of mixed TM/TM and TM/RE oxides. Experimental spectra for HfTiO 4 and Gd(Dy)ScO3 indicate multiple d-state features in the O K1 edge. These are compared with the empirical models for atomic d-state mixing. It is concluded that a mean field, virtual alloy model does not apply, and that the effects associated with the differences in atomic coordination and deviations from ideal octahedral or cubic bonding play a determinant role in d-state atom mixing. The results are applied band edge engineering options for high-k dielectric applications.
Original language | English (US) |
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Pages (from-to) | 913-916 |
Number of pages | 4 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 144-147 |
DOIs | |
State | Published - Jun 2005 |
Externally published | Yes |
Keywords
- Band gap engineering
- Complex oxides
- Spectroscopic ellipsometry
- X-ray absorption spectra
- d-State coupling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry