TY - JOUR
T1 - Study of detection efficiency of Cd 1-xZn xTe detectors for digital radiography
AU - Giakos, George C.
AU - Vedantham, Srinivasan
AU - Chowdhury, Samir
AU - Odogba, Jibril
AU - Dasgupta, Amlan
AU - Pillai, B.
AU - Sheffer, Daniel B.
AU - Nemer, Richard E.
AU - Guntupalli, Ravi Kumar
AU - Suryanarayanan, Sankararaman
AU - Vega-Lozada, Victor A.
AU - Endorf, Robert J.
AU - Passalaqua, Anthony
PY - 1998
Y1 - 1998
N2 - In this paper, the signal-to-noise ratio (S/N) of resistive Cd 1-xZn xTe semiconductor detectors, at different directions of irradiation, within the X-ray diagnostic energy range, has been experimentally studied. In addition, the dependence of the spatial resolution of a planar Cd 1-xZn xTe substrate both on the applied bias voltage and thickness has been experimentally determined. The detection efficiency of semiconductor detectors depend upon the energy absorption efficiency as well as the collection efficiency. This study suggests that high signal-to-noise ratios can be obtained by optimally choosing which polarizing electrode is directly exposed to the incident X-ray beam, as well as on both the detector thickness and applied bias voltage. In addition, the experimental results on the temporal system MTF indicate a spatial resolution of >6 cy/mm. Besides the intrinsic charge transport characteristics of the semiconductor sample, by decreasing the collector size and optimizing the X-ray digital system geometry and temporal response, the temporal system MTF can be improved significantly. The research imaging detector system allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of a digital radiographic system.
AB - In this paper, the signal-to-noise ratio (S/N) of resistive Cd 1-xZn xTe semiconductor detectors, at different directions of irradiation, within the X-ray diagnostic energy range, has been experimentally studied. In addition, the dependence of the spatial resolution of a planar Cd 1-xZn xTe substrate both on the applied bias voltage and thickness has been experimentally determined. The detection efficiency of semiconductor detectors depend upon the energy absorption efficiency as well as the collection efficiency. This study suggests that high signal-to-noise ratios can be obtained by optimally choosing which polarizing electrode is directly exposed to the incident X-ray beam, as well as on both the detector thickness and applied bias voltage. In addition, the experimental results on the temporal system MTF indicate a spatial resolution of >6 cy/mm. Besides the intrinsic charge transport characteristics of the semiconductor sample, by decreasing the collector size and optimizing the X-ray digital system geometry and temporal response, the temporal system MTF can be improved significantly. The research imaging detector system allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of a digital radiographic system.
KW - Cd Zn Te detectors
KW - Collection efficiency
KW - Detection efficiency
KW - Energy absorption efficiency
KW - Modulation transfer function (MTF)
KW - Physical parameters
KW - Spatial resolution
KW - X-ray digital radiography
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U2 - 10.1109/19.728827
DO - 10.1109/19.728827
M3 - Article
SN - 0018-9456
VL - 47
SP - 244
EP - 251
JO - IEEE Transactions on Instrumentation and Measurement
JF - IEEE Transactions on Instrumentation and Measurement
IS - 1
ER -