@article{a34d4dd0c4df4653af076cd2fd3ebbc6,
title = "Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy",
keywords = "gallium telluride, physical vapor transport, pseudo-1D materials",
author = "Hui Cai and Bin Chen and Gang Wang and Emmanuel Soignard and Afsaneh Khosravi and Marco Manca and Xavier Marie and Lan-Yun Chang and Bernhard Urbaszek and Sefaattin Tongay",
note = "Funding Information: This work was supported by the Arizona State University seeding program. The authors gratefully acknowledge the use of facilities at the LeRoy Eyring Center for Solid State Science at Arizona State University. The authors acknowledge the use of John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. S.T. acknowledges funding from NSF DMR-1552220. The authors acknowledge financial support through ERC Grant No. 306719, ITN Spin-NANO Marie Sklodowska-Curie Grant Agreement No. 676108, and ANR MoS2ValleyControl. X.M. acknowledges Institut Universitaire de France.",
year = "2017",
month = feb,
doi = "10.1002/adma.201605551",
language = "English (US)",
volume = "29",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "8",
}