The role of sputter pressure in influencing electrical and optical properties of ITO on glass

S. Elhalawaty, K. Sivaramakrishnan, N. D. Theodore, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Thin layers of indium tin oxide (ITO) were deposited onto glass substrates by RF magnetron sputtering with the pressure varying from 6 mTorr to 15 mTorr. The films were annealed in a reducing atmosphere at 500 °C for 30 minutes. Sheet resistance was determined by four-point-probe measurement. Resistivity, mobility, and carrier concentration were obtained by Hall effect measurements. Transmission of the films in the visible spectrum was determined by photospectrometry. The structure of the films was characterized by X-ray diffraction. X-ray photoelectron spectroscopy was used to determine the oxidation state of Sn, which was used to determine the fraction of active tin clusters. The effect of additional anneals was investigated. The results reveal that the lowest resistivity obtained was 1.69×10-4 Ω-cm at 9 mTorr and the highest transmittance of 90% was obtained after a second anneal. However, the second anneal decreased the mobility and conductivity for high sputter pressures.

Original languageEnglish (US)
Title of host publicationMultifunctional Nanoparticle Systems - Coupled Behavior and Applications
Number of pages12
StatePublished - 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 5 2010Apr 9 2010

Publication series

NameMaterials Research Society Symposium Proceedings


Other2010 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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