This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 11, TFT 2012
PublisherElectrochemical Society Inc.
Number of pages6
ISBN (Print)9781607683568
StatePublished - 2013
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: Oct 8 2012Oct 10 2012

Publication series

NameECS Transactions


Other11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
Country/TerritoryUnited States
CityHonolulu, HI

ASJC Scopus subject areas

  • General Engineering


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