@inproceedings{7e53393bf94f4b8f86d56194f380bcaa,
title = "The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation",
abstract = "This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.",
author = "Terry Alford and A. Indluru and Vemuri, \{Rajitha N P\} and Keith Holbert",
year = "2013",
doi = "10.1149/05008.0191ecst",
language = "English (US)",
isbn = "9781607683568",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "191--196",
booktitle = "Thin Film Transistors 11, TFT 2012",
edition = "8",
note = "11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 ; Conference date: 08-10-2012 Through 10-10-2012",
}