TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices

Jereme Neuendank; Fahad Al Mamun; Hugh Barnaby; Stefano Bonaldo; Matthew Spear; Trace Wallace; Daniel Loveless; Jacob Pew; Mohamed Nour; Pete Manos; Zach Giorno; Usman Suriono; Mike Chambers; Steve Kosier

doi:10.1109/IIRW59383.2023.10477707

TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices

Jereme Neuendank
, Fahad Al Mamun
, Hugh Barnaby
, Stefano Bonaldo
, Matthew Spear
, Trace Wallace
, Daniel Loveless
, Jacob Pew
, Mohamed Nour
, Pete Manos
, Zach Giorno
, Usman Suriono
, Mike Chambers
, Steve Kosier

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

90-nm MOSFETs from SkyWater are tested under X-ray. Low frequency noise measurements evidence random telegraph noise at various gate voltages in both pre-and post-rad conditions, revealing pre-existing and TID-induced prominent defects.

Original language	English (US)
Title of host publication	2023 IEEE International Integrated Reliability Workshop, IIRW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327274
DOIs	https://doi.org/10.1109/IIRW59383.2023.10477707
State	Published - 2023
Event	2023 IEEE International Integrated Reliability Workshop, IIRW 2023 - South Lake Tahoe, United States Duration: Oct 8 2023 → Oct 12 2023

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Conference

Conference	2023 IEEE International Integrated Reliability Workshop, IIRW 2023
Country/Territory	United States
City	South Lake Tahoe
Period	10/8/23 → 10/12/23

Keywords

RTN
RTS
Random Telegraph Noise
Random Telegraph Signal
TID
Total Ionizing Dose

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Access to Document

10.1109/IIRW59383.2023.10477707

Cite this

Neuendank, J., Al Mamun, F., Barnaby, H., Bonaldo, S., Spear, M., Wallace, T., Loveless, D., Pew, J., Nour, M., Manos, P., Giorno, Z., Suriono, U., Chambers, M., & Kosier, S. (2023). TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices. In 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW59383.2023.10477707

TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices. / Neuendank, Jereme; Al Mamun, Fahad; Barnaby, Hugh et al.
2023 IEEE International Integrated Reliability Workshop, IIRW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Neuendank, J, Al Mamun, F, Barnaby, H, Bonaldo, S, Spear, M, Wallace, T, Loveless, D, Pew, J, Nour, M, Manos, P, Giorno, Z, Suriono, U, Chambers, M & Kosier, S 2023, TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices. in 2023 IEEE International Integrated Reliability Workshop, IIRW 2023. IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Integrated Reliability Workshop, IIRW 2023, South Lake Tahoe, United States, 10/8/23. https://doi.org/10.1109/IIRW59383.2023.10477707

Neuendank J, Al Mamun F, Barnaby H, Bonaldo S, Spear M, Wallace T et al. TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices. In 2023 IEEE International Integrated Reliability Workshop, IIRW 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IIRW59383.2023.10477707

@inproceedings{309702cde1f54df18363e607554953e9,

title = "TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices",

abstract = "90-nm MOSFETs from SkyWater are tested under X-ray. Low frequency noise measurements evidence random telegraph noise at various gate voltages in both pre-and post-rad conditions, revealing pre-existing and TID-induced prominent defects.",

keywords = "RTN, RTS, Random Telegraph Noise, Random Telegraph Signal, TID, Total Ionizing Dose",

author = "Jereme Neuendank and \{Al Mamun\}, Fahad and Hugh Barnaby and Stefano Bonaldo and Matthew Spear and Trace Wallace and Daniel Loveless and Jacob Pew and Mohamed Nour and Pete Manos and Zach Giorno and Usman Suriono and Mike Chambers and Steve Kosier",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 ; Conference date: 08-10-2023 Through 12-10-2023",

year = "2023",

doi = "10.1109/IIRW59383.2023.10477707",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Neuendank, Jereme

AU - Al Mamun, Fahad

AU - Barnaby, Hugh

AU - Bonaldo, Stefano

AU - Spear, Matthew

AU - Wallace, Trace

AU - Loveless, Daniel

AU - Pew, Jacob

AU - Nour, Mohamed

AU - Manos, Pete

AU - Giorno, Zach

AU - Suriono, Usman

AU - Chambers, Mike

AU - Kosier, Steve

PY - 2023

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N2 - 90-nm MOSFETs from SkyWater are tested under X-ray. Low frequency noise measurements evidence random telegraph noise at various gate voltages in both pre-and post-rad conditions, revealing pre-existing and TID-induced prominent defects.

AB - 90-nm MOSFETs from SkyWater are tested under X-ray. Low frequency noise measurements evidence random telegraph noise at various gate voltages in both pre-and post-rad conditions, revealing pre-existing and TID-induced prominent defects.

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KW - RTS

KW - Random Telegraph Noise

KW - Random Telegraph Signal

KW - TID

KW - Total Ionizing Dose

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U2 - 10.1109/IIRW59383.2023.10477707

DO - 10.1109/IIRW59383.2023.10477707

M3 - Conference contribution

T3 - IEEE International Integrated Reliability Workshop Final Report

BT - 2023 IEEE International Integrated Reliability Workshop, IIRW 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Integrated Reliability Workshop, IIRW 2023

Y2 - 8 October 2023 through 12 October 2023

ER -

TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices

Abstract

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Keywords

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